Перегляд за автором "Gavrilyuk, V.P."

Сортувати за: Порядок: Результатів:

  • Boyarintsev, A.Yu.; Gektin, A.V.; Gavrilyuk, V.P.; Koshel, V.I.; Pedash, V.Yu. (Functional Materials, 2009)
    The light reflection conditions near the crystal fringes are known to differ from those in the sample middle part due to additional reflections from the butt surfaces. Such effects may be insignificant (as, for example, ...
  • Bondar, V.G.; Gavrilyuk, V.P.; Konevskii, V.S.; Krivonosov, E.V.; Martynov, V.P.; Savvin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It is known that in case of registration of the scintillation light using photomultiplier energy resolution of the scintillation detector can be written as sum of three components, each of them is statistically independent ...
  • Andryuschenko, L.A.; Goriletsky, V.I.; Grinyov, B.V.; Gavrilyuk, V.P.; Zosim, D.I.; Skripkina, V.T.; Shershykov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of organosilicon materials in the detection devices is one of the promising directions in the improvement of their characteristics. Especially efficient are these materials when used as a polymer base of the ...
  • Volkov, V.G.; Gavrilyuk, V.P.; Galchinetskii, L.P.; Grinyov, B.V.; Katrunov, K.A.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A highly efficient ZnSe(Te) scintillation detector combined with Si-photodiode has been developed. A conglomerate made up of ZnSe(Te) grains is used as a scintillator. Optimal shape of the grains, reflecting cover and ...